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OL-PMCM6501VNE
Discrete Semiconductor Products

PMCM6501UNEZ

Obsolete
Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

OL-PMCM6501VNE
Discrete Semiconductor Products

PMCM6501UNEZ

Obsolete
Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCM6501UNEZ
Current - Continuous Drain (Id) @ 25°C8.7 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1050 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseWLCSP, 6-XFBGA
Power Dissipation (Max) [Max]400 mW
Rds On (Max) @ Id, Vgs21 mOhm
Supplier Device Package6-WLCSP
Supplier Device Package [x]1.48
Supplier Device Package [y]0.98
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.50
100$ 0.34
500$ 0.29
1000$ 0.24
2000$ 0.22
Digi-Reel® 1$ 0.57
10$ 0.50
100$ 0.34
500$ 0.29
1000$ 0.24
2000$ 0.22
N/A 3005$ 1.20
4464$ 0.50
Tape & Reel (TR) 4500$ 0.22
9000$ 0.19
31500$ 0.19

Description

General part information

PMCM6501 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.