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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | FET Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 21 mOhm | MOSFET (Metal Oxide) | 900 mV | 0.98 | 1.48 | 6-WLCSP | N-Channel | 150 °C | 1.5 V 4.5 V | 6.2 nC | 1050 pF | 400 mW | 20 V | 6-XFBGA WLCSP | 8.7 A | Surface Mount | 8 V | |||
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 0.98 | 1.48 | 6-WLCSP | P-Channel | 150 °C | 556 mW | 20 V | 6-XFBGA WLCSP | 7.3 A | Surface Mount | 8 V | 19.1 nC | 2.5 V | 4.5 V |