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8-SOIC
Integrated Circuits (ICs)

LM5101M/NOPB

Active
Texas Instruments

HIGH VOLTAGE HIGH SIDE AND LOW SIDE GATE DRIVER

8-SOIC
Integrated Circuits (ICs)

LM5101M/NOPB

Active
Texas Instruments

HIGH VOLTAGE HIGH SIDE AND LOW SIDE GATE DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5101M/NOPB
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]1.6 A
Current - Peak Output (Source, Sink) [custom]1.6 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]118 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]2.2 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]600 ns
Rise / Fall Time (Typ) [custom]600 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]14 V
Voltage - Supply [Min]9 V

LM5101A Series

3-A, 100-V half bridge gate driver with 8-V UVLO and TTL inputs

PartNumber of DriversChannel TypeDriven ConfigurationCurrent - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Logic Voltage - VIL, VIHLogic Voltage - VIL, VIHSupplier Device PackageGate TypeOperating Temperature [Min]Operating Temperature [Max]Package / CaseRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Input TypeMounting TypeHigh Side Voltage - Max (Bootstrap) [Max]Voltage - Supply [Min]Voltage - Supply [Max]Package / Case [y]Package / Case [x]Logic Voltage - VIL, VIH [custom]Logic Voltage - VIL, VIH [custom]Package / Case [custom]Package / Case [custom]
LMR14020QDPRRQ1
Texas Instruments
2
Independent
Half-Bridge
3 A
3 A
-
2.3 V
10-WSON (4x4)
N-Channel MOSFET
-40 °C
125 ¯C
10-WDFN Exposed Pad
260 ns
430 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
8-SOIC
Texas Instruments
2
Independent
Half-Bridge
1.6 A
1.6 A
8-SOIC
N-Channel MOSFET
-40 °C
125 ¯C
8-SOIC
600 ns
600 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3.9 mm
0.154 in
2.2 V
0.8 V
8-SOIC
Texas Instruments
2
Independent
Half-Bridge
1.6 A
1.6 A
8-SOIC
N-Channel MOSFET
-40 °C
125 ¯C
8-SOIC
600 ns
600 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3.9 mm
0.154 in
2.2 V
0.8 V
8-SOIC
Texas Instruments
2
Independent
Half-Bridge
3 A
3 A
-
2.3 V
8-SOIC
N-Channel MOSFET
-40 °C
125 ¯C
8-SOIC
260 ns
430 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3.9 mm
0.154 in
SOIC (D)
Texas Instruments
2
Independent
Half-Bridge
1.6 A
1.6 A
8-SOIC
N-Channel MOSFET
-40 °C
125 ¯C
8-SOIC
600 ns
600 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3.9 mm
0.154 in
2.2 V
0.8 V
LM25085MYE/NOPB
Texas Instruments
2
Independent
Half-Bridge
1 A
1 A
-
2.3 V
8-HVSSOP
N-Channel MOSFET
-40 °C
125 ¯C
8-MSOP
8-PowerTSSOP
715 ns
990 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3 mm
0.118 in
LMR14020QDPRRQ1
Texas Instruments
2
Independent
Half-Bridge
2 A
2 A
-
2.3 V
10-WSON (4x4)
N-Channel MOSFET
-40 °C
125 ¯C
10-WDFN Exposed Pad
430 ns
570 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
10-WFDFN Exp Pkg
Texas Instruments
2
Independent
Half-Bridge
1 A
1 A
-
2.3 V
10-WSON (4x4)
N-Channel MOSFET
-40 °C
125 ¯C
10-WDFN Exposed Pad
715 ns
990 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
8-SOIC
Texas Instruments
2
Independent
Half-Bridge
1 A
1 A
-
2.3 V
8-SOIC
N-Channel MOSFET
-40 °C
125 ¯C
8-SOIC
715 ns
990 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3.9 mm
0.154 in
8-MSOP Exp Pad Pkg
Texas Instruments
2
Independent
Half-Bridge
1 A
1 A
-
2.3 V
8-HVSSOP
N-Channel MOSFET
-40 °C
125 ¯C
8-MSOP
8-PowerTSSOP
715 ns
990 ns
Non-Inverting
Surface Mount
118 V
9 V
14 V
3 mm
0.118 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.88
10$ 3.96
25$ 3.46
100$ 2.90
250$ 2.63
500$ 2.46
1000$ 2.32
2500$ 2.18
Texas InstrumentsTUBE 1$ 3.45
100$ 3.03
250$ 2.12
1000$ 1.71

Description

General part information

LM5101A Series

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).