LM5101A Series

3-A, 100-V half bridge gate driver with 8-V UVLO and TTL inputs

Catalog

3-A, 100-V half bridge gate driver with 8-V UVLO and TTL inputs

Part	Number of Drivers	Channel Type	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Logic Voltage - VIL, VIH	Supplier Device Package	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [y]	Package / Case [x]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Package / Case [custom]	Package / Case [custom]
Texas Instruments LM5101ASDX/NOPB	2	Independent	Half-Bridge	3 A	3 A	-	2.3 V	10-WSON (4x4)	N-Channel MOSFET	-40 °C	125 ¯C	10-WDFN Exposed Pad	260 ns	430 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V
Texas Instruments LM5101M/NOPB	2	Independent	Half-Bridge	1.6 A	1.6 A			8-SOIC	N-Channel MOSFET	-40 °C	125 ¯C	8-SOIC	600 ns	600 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V	3.9 mm	0.154 in	2.2 V	0.8 V
Texas Instruments LM5101M	2	Independent	Half-Bridge	1.6 A	1.6 A			8-SOIC	N-Channel MOSFET	-40 °C	125 ¯C	8-SOIC	600 ns	600 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V	3.9 mm	0.154 in	2.2 V	0.8 V
Texas Instruments LM5101AM	2	Independent	Half-Bridge	3 A	3 A	-	2.3 V	8-SOIC	N-Channel MOSFET	-40 °C	125 ¯C	8-SOIC	260 ns	430 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V	3.9 mm	0.154 in
Texas Instruments LM5101MX/NOPB	2	Independent	Half-Bridge	1.6 A	1.6 A			8-SOIC	N-Channel MOSFET	-40 °C	125 ¯C	8-SOIC	600 ns	600 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V	3.9 mm	0.154 in	2.2 V	0.8 V
Texas Instruments LM5101CMYX/NOPB	2	Independent	Half-Bridge	1 A	1 A	-	2.3 V	8-HVSSOP	N-Channel MOSFET	-40 °C	125 ¯C	8-MSOP 8-PowerTSSOP	715 ns	990 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V					3 mm	0.118 in
Texas Instruments LM5101BSDX/NOPB	2	Independent	Half-Bridge	2 A	2 A	-	2.3 V	10-WSON (4x4)	N-Channel MOSFET	-40 °C	125 ¯C	10-WDFN Exposed Pad	430 ns	570 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V
Texas Instruments LM5101CSD/NOPB	2	Independent	Half-Bridge	1 A	1 A	-	2.3 V	10-WSON (4x4)	N-Channel MOSFET	-40 °C	125 ¯C	10-WDFN Exposed Pad	715 ns	990 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V
Texas Instruments LM5101CMA	2	Independent	Half-Bridge	1 A	1 A	-	2.3 V	8-SOIC	N-Channel MOSFET	-40 °C	125 ¯C	8-SOIC	715 ns	990 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V	3.9 mm	0.154 in
Texas Instruments LM5101CMYE/NOPB	2	Independent	Half-Bridge	1 A	1 A	-	2.3 V	8-HVSSOP	N-Channel MOSFET	-40 °C	125 ¯C	8-MSOP 8-PowerTSSOP	715 ns	990 ns	Non-Inverting	Surface Mount	118 V	9 V	14 V					3 mm	0.118 in

Key Features

• Drives Both a High-Side and Low-Side N-ChannelMOSFETsIndependent High- and Low-Driver Logic InputsBootstrap Supply Voltage up to 118 V DCFast Propagation Times (25-ns Typical)Drives 1000-pF Load With 8-ns Rise and FallTimesExcellent Propagation Delay Matching (3-nsTypical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With HIP2100/HIP2101Drives Both a High-Side and Low-Side N-ChannelMOSFETsIndependent High- and Low-Driver Logic InputsBootstrap Supply Voltage up to 118 V DCFast Propagation Times (25-ns Typical)Drives 1000-pF Load With 8-ns Rise and FallTimesExcellent Propagation Delay Matching (3-nsTypical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With HIP2100/HIP2101

Description

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package. The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.