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Technical Specifications
Parameters and characteristics for this part
| Specification | LM5101M |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 1.6 A |
| Current - Peak Output (Source, Sink) [custom] | 1.6 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 118 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [custom] | 2.2 V |
| Logic Voltage - VIL, VIH [custom] | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 600 ns |
| Rise / Fall Time (Typ) [custom] | 600 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 14 V |
| Voltage - Supply [Min] | 9 V |
LM5101A Series
3-A, 100-V half bridge gate driver with 8-V UVLO and TTL inputs
| Part | Number of Drivers | Channel Type | Driven Configuration | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH | Logic Voltage - VIL, VIH | Supplier Device Package | Gate Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Mounting Type | High Side Voltage - Max (Bootstrap) [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case [y] | Package / Case [x] | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Package / Case [custom] | Package / Case [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 2 | Independent | Half-Bridge | 3 A | 3 A | - | 2.3 V | 10-WSON (4x4) | N-Channel MOSFET | -40 °C | 125 ¯C | 10-WDFN Exposed Pad | 260 ns | 430 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | ||||||
Texas Instruments | 2 | Independent | Half-Bridge | 1.6 A | 1.6 A | 8-SOIC | N-Channel MOSFET | -40 °C | 125 ¯C | 8-SOIC | 600 ns | 600 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3.9 mm | 0.154 in | 2.2 V | 0.8 V | ||||
Texas Instruments | 2 | Independent | Half-Bridge | 1.6 A | 1.6 A | 8-SOIC | N-Channel MOSFET | -40 °C | 125 ¯C | 8-SOIC | 600 ns | 600 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3.9 mm | 0.154 in | 2.2 V | 0.8 V | ||||
Texas Instruments | 2 | Independent | Half-Bridge | 3 A | 3 A | - | 2.3 V | 8-SOIC | N-Channel MOSFET | -40 °C | 125 ¯C | 8-SOIC | 260 ns | 430 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3.9 mm | 0.154 in | ||||
 Texas Instruments | 2 | Independent | Half-Bridge | 1.6 A | 1.6 A | 8-SOIC | N-Channel MOSFET | -40 °C | 125 ¯C | 8-SOIC | 600 ns | 600 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3.9 mm | 0.154 in | 2.2 V | 0.8 V | ||||
 Texas Instruments | 2 | Independent | Half-Bridge | 1 A | 1 A | - | 2.3 V | 8-HVSSOP | N-Channel MOSFET | -40 °C | 125 ¯C | 8-MSOP 8-PowerTSSOP | 715 ns | 990 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3 mm | 0.118 in | ||||
Texas Instruments | 2 | Independent | Half-Bridge | 2 A | 2 A | - | 2.3 V | 10-WSON (4x4) | N-Channel MOSFET | -40 °C | 125 ¯C | 10-WDFN Exposed Pad | 430 ns | 570 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | ||||||
Texas Instruments | 2 | Independent | Half-Bridge | 1 A | 1 A | - | 2.3 V | 10-WSON (4x4) | N-Channel MOSFET | -40 °C | 125 ¯C | 10-WDFN Exposed Pad | 715 ns | 990 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | ||||||
Texas Instruments | 2 | Independent | Half-Bridge | 1 A | 1 A | - | 2.3 V | 8-SOIC | N-Channel MOSFET | -40 °C | 125 ¯C | 8-SOIC | 715 ns | 990 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3.9 mm | 0.154 in | ||||
Texas Instruments | 2 | Independent | Half-Bridge | 1 A | 1 A | - | 2.3 V | 8-HVSSOP | N-Channel MOSFET | -40 °C | 125 ¯C | 8-MSOP 8-PowerTSSOP | 715 ns | 990 ns | Non-Inverting | Surface Mount | 118 V | 9 V | 14 V | 3 mm | 0.118 in |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
LM5101A Series
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).
An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).
Documents
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