AFGHL50T65SQDC
ActiveHYBRID IGBT, 650V, 50A FIELDSTOP 4 TRENCH IGBT WITH SIC-SBD
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AFGHL50T65SQDC
ActiveHYBRID IGBT, 650V, 50A FIELDSTOP 4 TRENCH IGBT WITH SIC-SBD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AFGHL50T65SQDC |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 94 nC |
| Grade | Automotive |
| IGBT Type | Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 238 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 131 µJ, 96 µJ |
| Td (on/off) @ 25°C | 94.4 ns |
| Td (on/off) @ 25°C | 17.6 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 30 | $ 8.64 | |
| 90 | $ 7.73 | |||
| 300 | $ 7.27 | |||
| 750 | $ 6.82 | |||
| 1500 | $ 6.14 | |||
| Newark | Each | 1 | $ 13.80 | |
| 10 | $ 11.97 | |||
| 25 | $ 11.55 | |||
| 50 | $ 11.13 | |||
| 100 | $ 10.69 | |||
| 250 | $ 10.24 | |||
| 900 | $ 9.90 | |||
| ON Semiconductor | N/A | 1 | $ 6.00 | |
Description
General part information
AFGHL50T65SQDC Series
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Documents
Technical documentation and resources
