Specification	AFGHL50T65SQD

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	102 nC
Grade	Automotive
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	268 W
Qualification	AEC-Q101
Supplier Device Package	TO-247-3
Switching Energy	950 µJ, 460 µJ
Td (on/off) @ 25°C	81 ns, 20 ns
Test Condition	4.7 Ohm, 50 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

AFGHL50T65SQDC Series

Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD

Part	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Grade	Current - Collector (Ic) (Max) [Max]	Package / Case	Td (on/off) @ 25°C	Test Condition
ON Semiconductor AFGHL50T65SQDC	2.1 V	238 W	650 V	96 µJ 131 µJ	Field Stop	-55 °C	175 ░C	AEC-Q101	94 nC	Through Hole	200 A	TO-247-3	94.4 ns	17.6 ns	Automotive	100 A	TO-247-3
ON Semiconductor AFGHL50T65SQD	2.1 V	268 W	650 V	460 µJ 950 µJ	Trench Field Stop	-55 °C	175 ░C	AEC-Q101	102 nC	Through Hole	200 A	TO-247-3			Automotive	80 A	TO-247-3	20 ns 81 ns	4.7 Ohm 15 V 50 A 400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.58
		30	$ 4.42
		120	$ 3.79
		510	$ 3.37
		1020	$ 2.88
		2010	$ 2.71
Newark	Each	1	$ 6.13
		10	$ 6.10
		25	$ 5.43
		50	$ 4.77
		100	$ 4.62
		250	$ 4.47
		900	$ 4.36
ON Semiconductor	N/A	1	$ 2.40

Description

General part information

AFGHL50T65SQDC Series

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-340CX-TO-247-3LD

Package Drawing