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2N3879_view2
Discrete Semiconductor Products

2N3879

Active
Microchip Technology

75V NPN POWER BJT THT TO-66 ROHS COMPLIANT: YES

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2N3879_view2
Discrete Semiconductor Products

2N3879

Active
Microchip Technology

75V NPN POWER BJT THT TO-66 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3879
Current - Collector (Ic) (Max) [Max]7 A
Current - Collector Cutoff (Max) [Max]4 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]35 W
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 22.96
100$ 21.32
Microchip DirectN/A 1$ 22.96
NewarkEach 100$ 21.32
500$ 20.50

Description

General part information

JANTX2N3879-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N3879 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/526. The device package outline is a modified TO-213AA (similar to a TO-66).

Documents

Technical documentation and resources