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Microchip Technology-2N6295 Darlington BJT Trans Darlington NPN 80V 4A 50000mW 3-Pin(2+Tab) TO-66
Discrete Semiconductor Products

JANTX2N3879

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Microchip Technology

TRANS GP BJT NPN 75V 7A 35000MW 3-PIN(2+TAB) TO-66 TRAY

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Documents2N3879
Microchip Technology-2N6295 Darlington BJT Trans Darlington NPN 80V 4A 50000mW 3-Pin(2+Tab) TO-66
Discrete Semiconductor Products

JANTX2N3879

Active
Microchip Technology

TRANS GP BJT NPN 75V 7A 35000MW 3-PIN(2+TAB) TO-66 TRAY

Deep-Dive with AI

Documents2N3879

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N3879
Current - Collector (Ic) (Max) [Max]7 A
Current - Collector Cutoff (Max) [Max]25 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]35 W
QualificationMIL-PRF-19500/526
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 32.79
Microchip DirectN/A 1$ 35.31

Description

General part information

JANTX2N3879-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N3879 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/526. The device package outline is a modified TO-213AA (similar to a TO-66).

Documents

Technical documentation and resources