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Discrete Semiconductor Products

APTGT75DH120T3G

Active
Microchip Technology

1200V/ASYMMETRICAL BRIDGE/IGBT MODULES

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Discrete Semiconductor Products

APTGT75DH120T3G

Active
Microchip Technology

1200V/ASYMMETRICAL BRIDGE/IGBT MODULES

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTGT75DH120T3G
ConfigurationAsymmetrical Bridge
Current - Collector (Ic) (Max) [Max]110 A
Current - Collector Cutoff (Max) [Max]250 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce5.34 nF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP3
Power - Max [Max]357 W
Supplier Device PackageSP3
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 13$ 94.67
Microchip DirectN/A 1$ 94.67
50$ 78.44
100$ 70.33
250$ 67.62
500$ 59.51
1000$ 54.10
5000$ 47.61

Description

General part information

APTGT75DDA60T3G-Module Series

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