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APTGT75A120T1G
Discrete Semiconductor Products

APTGT75A120T1G

Active
Microchip Technology

IGBT MODULE 1200V 110A 357W SP1

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APTGT75A120T1G
Discrete Semiconductor Products

APTGT75A120T1G

Active
Microchip Technology

IGBT MODULE 1200V 110A 357W SP1

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTGT75A120T1G
ConfigurationHalf Bridge
Current - Collector (Ic) (Max) [Max]110 A
Current - Collector Cutoff (Max) [Max]250 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce5.34 nF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP1
Power - Max [Max]357 W
Supplier Device PackageSP1
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 13$ 82.21
Microchip DirectN/A 1$ 82.21
50$ 68.51
100$ 60.29
250$ 58.64
500$ 57.00
1000$ 54.81
5000$ 51.52

Description

General part information

APTGT75DDA60T3G-Module Series

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