Specification	NTHD2110TT1G

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1072 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	850 mV

NTHD2102P Series

Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Feature	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTHD2102PT1G	3.4 A	ChipFET™	Logic Level Gate	1.5 V	Surface Mount	8 V	16 nC	MOSFET (Metal Oxide)	1.1 W	2 P-Channel	715 pF	-55 °C	150 °C
ON Semiconductor NTHD2110TT1G	4.5 A	ChipFET™		850 mV	Surface Mount	12 V	14 nC	MOSFET (Metal Oxide)			1072 pF	-55 °C	150 °C	40 mOhm	P-Channel	1.1 W	8 V	1.8 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFET™

Technical documentation and resources