Discrete Semiconductor Products
NTHD2102PT1G
ObsoleteON Semiconductor
POWER MOSFET 8V 4.6A 62 MOHM DUAL P-CHANNEL CHIPFET
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Discrete Semiconductor Products
NTHD2102PT1G
ObsoleteON Semiconductor
POWER MOSFET 8V 4.6A 62 MOHM DUAL P-CHANNEL CHIPFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTHD2102PT1G |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4 A |
| Drain to Source Voltage (Vdss) | 8 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 715 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 1.1 W |
| Supplier Device Package | ChipFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTHD2102P Series
Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFET™
Documents
Technical documentation and resources