NTHD2102P Series

Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET

Catalog

Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Feature	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTHD2102PT1G	3.4 A	ChipFET™	Logic Level Gate	1.5 V	Surface Mount	8 V	16 nC	MOSFET (Metal Oxide)	1.1 W	2 P-Channel	715 pF	-55 °C	150 °C
ON Semiconductor NTHD2110TT1G	4.5 A	ChipFET™		850 mV	Surface Mount	12 V	14 nC	MOSFET (Metal Oxide)			1072 pF	-55 °C	150 °C	40 mOhm	P-Channel	1.1 W	8 V	1.8 V 4.5 V

Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET

• Ultra low RDS(on) in the ChipFET™ Package

• Miniature ChipFET™ Package is 40% Smaller Footprint than TSOP-6

• Low Profile (<1.1 mm) Allows it o Fit Easily into Extremely Thin Environments

• Designed to Provide Low RDS(on) at Gate Voltages as Low as 1.8 V

• Additional Boost Circuits for Gate Voltages are not Required to Simplify Circuit Design

• Operates at Standard Logic Level Gate Drive

• Pb-Free Package is Available

Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFET™