JAN2N3867P
ActivePNP SILICON LOW-POWER -40V TO -60V, -3A
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JAN2N3867P
ActivePNP SILICON LOW-POWER -40V TO -60V, -3A
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Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3867P |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/350 |
| Supplier Device Package | TO-5AA |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 31.76 | |
| Microchip Direct | N/A | 1 | $ 34.20 | |
| Newark | Each | 100 | $ 31.76 | |
| 500 | $ 30.54 | |||
Description
General part information
JAN2N3867P-Transistor-PIND Series
This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels.
Documents
Technical documentation and resources