Discrete Semiconductor Products

MBR860MFST3G

Obsolete

8 A, 60 V SCHOTTKY DIODE IN SO-8FL

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Discrete Semiconductor Products

Obsolete

8 A, 60 V SCHOTTKY DIODE IN SO-8FL

Technical Specifications

Parameters and characteristics for this part

Specification	MBR860MFST3G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	8-PowerTDFN, 5 Leads
Speed	200 mA, 500 ns
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	800 mV

8 A, 60 V Schottky Diode in SO-8FL

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Speed	Supplier Device Package	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr
ON Semiconductor MBR860MFST3G	800 mV	8-PowerTDFN 5 Leads	175 ░C	-55 C	60 V	8 A	Schottky	200 mA 500 ns	5-DFN (5x6)	8-SOFL	Surface Mount	150 µA
ON Semiconductor MBR860MFST1G	800 mV	8-PowerTDFN 5 Leads	175 ░C	-55 C	60 V	8 A	Schottky	200 mA 500 ns	5-DFN (5x6)	8-SOFL	Surface Mount	150 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

8 A, 60 V Schottky Diode in SO-8FL

Technical documentation and resources