MBR860MFS Series

8 A, 60 V Schottky Diode in SO-8FL

Catalog

8 A, 60 V Schottky Diode in SO-8FL

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Speed	Supplier Device Package	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr
ON Semiconductor MBR860MFST3G	800 mV	8-PowerTDFN 5 Leads	175 ░C	-55 C	60 V	8 A	Schottky	200 mA 500 ns	5-DFN (5x6)	8-SOFL	Surface Mount	150 µA
ON Semiconductor MBR860MFST1G	800 mV	8-PowerTDFN 5 Leads	175 ░C	-55 C	60 V	8 A	Schottky	200 mA 500 ns	5-DFN (5x6)	8-SOFL	Surface Mount	150 µA

8 A, 60 V Schottky Diode in SO-8FL

• Low Power Loss / High Efficiency

• New Package Provides Capability of Inspection and Probe AfterBoard Mounting

• Guardring for Stress Protection

• Low Forward Voltage Drop

• 175°C Operating Junction Temperature

• Wettable Flacks Option Available

• NRVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable

• These are Pb−Free Devices

8 A, 60 V Schottky Diode in SO-8FL