Discrete Semiconductor Products
MBR860MFST1G
ObsoleteON Semiconductor
8 A, 60 V SCHOTTKY DIODE IN SO-8FL
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Discrete Semiconductor Products
MBR860MFST1G
ObsoleteON Semiconductor
8 A, 60 V SCHOTTKY DIODE IN SO-8FL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MBR860MFST1G |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 150 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | 5-DFN (5x6) |
| Supplier Device Package | 8-SOFL |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 800 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBR860MFS Series
8 A, 60 V Schottky Diode in SO-8FL
Documents
Technical documentation and resources