Discrete Semiconductor Products

JAN1N3613

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DIODE GEN PURP 600V 1A AXIAL

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 1A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N3613

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	100 µA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	A, Axial
Package Name	A, Axial
Qualification	228, MIL-PRF-19500
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - Forward (Vf) (Max)	Package Name	Package / Case	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Voltage - DC Reverse (Vr) (Max)	Mounting Type	Current - Reverse Leakage	Current - Average Rectified (Io)	Technology	Qualification	Grade
Microchip Technology 1N3613	175 °C	-65 °C	1.1 V	A Axial	A Axial	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	600 V	Through Hole	1 µA	1 A	Standard
Microchip Technology JAN1N3613	175 °C	-65 °C	1.1 V	A Axial	A Axial	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	600 V	Through Hole	100 µA	1 A	Standard	228 MIL-PRF-19500	Military

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	178	$ 3.82	1m+
	N/A	0	$ 4.10	1m+
		0	$ 0.00

3D models and CAD resources for this part

General part information

Diode 600 V 1A Through Hole A, Axial

Technical documentation and resources