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TO-263AB
Discrete Semiconductor Products

IRL620S

Obsolete

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DocumentsDatasheet
TO-263AB
Discrete Semiconductor Products

IRL620S

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL620S
Current - Continuous Drain (Id) @ 25°C5.2 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds360 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.1 W, 50 W
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRL620 Series

N-Channel 200 V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources