IRL620 Series

Catalog

MOSFET N-CH 200V 5.2A D2PAK

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRL620STRLPBF	3.1 W 50 W	-55 °C	150 °C	MOSFET (Metal Oxide)	5.2 A	200 V	Surface Mount	TO-263 (D2PAK)	10 V	360 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	4 V	10 V	800 mOhm
Vishay General Semiconductor - Diodes Division IRL620PBF		-55 °C	150 °C	MOSFET (Metal Oxide)	5.2 A	200 V	Through Hole	TO-220AB	10 V	360 pF	N-Channel	TO-220-3	2 V			800 mOhm	50 W	4 V 5 V
Vishay General Semiconductor - Diodes Division IRL620PBF-BE3		-55 °C	150 °C	MOSFET (Metal Oxide)	5.2 A	200 V	Through Hole	TO-220AB	10 V	360 pF	N-Channel	TO-220-3	2 V			800 mOhm	50 W
Vishay General Semiconductor - Diodes Division IRL620S	3.1 W 50 W	-55 °C	150 °C	MOSFET (Metal Oxide)	5.2 A	200 V	Surface Mount	TO-263 (D2PAK)	10 V	360 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	4 V	10 V	800 mOhm