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TO-220AB
Discrete Semiconductor Products

IRL620PBF-BE3

LTB

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TO-220AB
Discrete Semiconductor Products

IRL620PBF-BE3

LTB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL620PBF-BE3
Current - Continuous Drain (Id) @ 25°C5.2 A
Drain to Source Voltage (Vdss)200 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds360 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]50 W
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.73
50$ 1.39

Description

General part information

IRL620 Series

N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources