
MICROFJ-60035-TSV-TR
ActiveSILICON PHOTOMULTIPLIER SENSORS, J-SERIES (SIPM)
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MICROFJ-60035-TSV-TR
ActiveSILICON PHOTOMULTIPLIER SENSORS, J-SERIES (SIPM)
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Technical Specifications
Parameters and characteristics for this part
| Specification | MICROFJ-60035-TSV-TR |
|---|---|
| Active Area | 36.85 mm² |
| Current - Dark (Typ) | 7.5 µA |
| Diode Type | Avalanche |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 36-WBGA |
| Response Time | 250 ps |
| Spectral Range [Max] | 900 nm |
| Spectral Range [Min] | 200 nm |
| Voltage - DC Reverse (Vr) (Max) [Max] | 24.7 V |
| Wavelength | 420 nm |
J-SERIES Series
Silicon Photomultiplier Sensors, J-Series (SiPM)
| Part | Active Area | Response Time | Current - Dark (Typ) | Package / Case | Spectral Range [Max] | Spectral Range [Min] | Diode Type | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Wavelength | Operating Temperature [Max] | Operating Temperature [Min] | Utilized IC / Part | Interface | Supplied Contents | Sensor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 36.85 mm² | 250 ps | 7.5 µA | 36-WBGA | 900 nm | 200 nm | Avalanche | 24.7 V | Surface Mount | 420 nm | 85 °C | -40 °C | ||||
ON Semiconductor | 36.85 mm² | 250 ps | 7.5 µA | 36-WBGA | 900 nm | 200 nm | Avalanche | 24.7 V | Surface Mount | 420 nm | 85 °C | -40 °C | ||||
ON Semiconductor | MicroFJ-30020 | Analog | Board(s) | Light Silicon Photomultiplier (SiPM) | ||||||||||||
ON Semiconductor | 15.45 mm˛ | 110 ps | 3 µA | 14-WBGA | 900 nm | 200 nm | Avalanche | 24.7 V | Surface Mount | 420 nm | 85 °C | -40 °C | ||||
ON Semiconductor | 15.45 mm˛ | 110 ps | 3 µA | 14-WBGA | 900 nm | 200 nm | Avalanche | 24.7 V | Surface Mount | 420 nm | 85 °C | -40 °C | ||||
ON Semiconductor | 9.43 mm² | 110 ps | 1.9 µA | 8-WBGA | 900 nm | 200 nm | Avalanche | 24.7 V | Surface Mount | 420 nm | 85 °C | -40 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
J-SERIES Series
ON Semiconductor's J-Series silicon photomultiplier (SiPM) sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark count rates of 50 kHz/mm2and because the sensors are created using a high-volume CMOS silicon process they feature an exceptional breakdown voltage uniformity of ±250 mV.
Documents
Technical documentation and resources