J-SERIES Series

Silicon Photomultiplier Sensors, J-Series (SiPM)

Catalog

Silicon Photomultiplier Sensors, J-Series (SiPM)

Part	Active Area	Response Time	Current - Dark (Typ)	Package / Case	Spectral Range [Max]	Spectral Range [Min]	Diode Type	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Wavelength	Operating Temperature [Max]	Operating Temperature [Min]	Utilized IC / Part	Interface	Supplied Contents	Sensor Type
ON Semiconductor MICROFJ-60035-TSV-TR	36.85 mm²	250 ps	7.5 µA	36-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-60035-TSV-TR1	36.85 mm²	250 ps	7.5 µA	36-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-SMTPA-30020-GEVB													MicroFJ-30020	Analog	Board(s)	Light Silicon Photomultiplier (SiPM)
ON Semiconductor MICROFJ-40035-TSV-TR1	15.45 mm˛	110 ps	3 µA	14-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-40035-TSV-TR	15.45 mm˛	110 ps	3 µA	14-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-30035-TSV-TR	9.43 mm²	110 ps	1.9 µA	8-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C

Catalog

Silicon Photomultiplier Sensors, J-Series (SiPM)

Key Features

• High-density microcells

• J-Series sensors feature ON Semiconductor's unique 'fast output' terminal

• Temperature stability of 21.5 mV/°C

• Exceptional breakdown voltage uniformity of ±250 mV

• Available in a reflow solder compatible TSV chip-scale package

• Ultra-low dark count rates of 50 kHz/mm2typical

• Optimized for high-performance timing applications, such as ToF-PET

• 3 mm, 4 mm and 6 mm sensor sizes

• Bias voltage of <30 V

Description

ON Semiconductor's J-Series silicon photomultiplier (SiPM) sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark count rates of 50 kHz/mm2and because the sensors are created using a high-volume CMOS silicon process they feature an exceptional breakdown voltage uniformity of ±250 mV.