Specification	MICROFJ-30035-TSV-TR

Active Area	9.43 mm²
Current - Dark (Typ)	1.9 µA
Diode Type	Avalanche
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-WBGA
Response Time	110 ps
Spectral Range [Max]	900 nm
Spectral Range [Min]	200 nm
Voltage - DC Reverse (Vr) (Max) [Max]	24.7 V
Wavelength	420 nm

J-SERIES Series

Silicon Photomultiplier Sensors, J-Series (SiPM)

Part	Active Area	Response Time	Current - Dark (Typ)	Package / Case	Spectral Range [Max]	Spectral Range [Min]	Diode Type	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Wavelength	Operating Temperature [Max]	Operating Temperature [Min]	Utilized IC / Part	Interface	Supplied Contents	Sensor Type
ON Semiconductor MICROFJ-60035-TSV-TR	36.85 mm²	250 ps	7.5 µA	36-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-60035-TSV-TR1	36.85 mm²	250 ps	7.5 µA	36-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-SMTPA-30020-GEVB													MicroFJ-30020	Analog	Board(s)	Light Silicon Photomultiplier (SiPM)
ON Semiconductor MICROFJ-40035-TSV-TR1	15.45 mm˛	110 ps	3 µA	14-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-40035-TSV-TR	15.45 mm˛	110 ps	3 µA	14-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C
ON Semiconductor MICROFJ-30035-TSV-TR	9.43 mm²	110 ps	1.9 µA	8-WBGA	900 nm	200 nm	Avalanche	24.7 V	Surface Mount	420 nm	85 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 22.04
		5	$ 20.13
		10	$ 19.42
		25	$ 18.58
		50	$ 18.48
	Digi-Reel®	1	$ 22.04
		5	$ 20.13
		10	$ 19.42
		25	$ 18.58
		50	$ 18.48
	Tape & Reel (TR)	3000	$ 14.49
Newark	Each	250	$ 16.43

Description

General part information

J-SERIES Series

ON Semiconductor's J-Series silicon photomultiplier (SiPM) sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark count rates of 50 kHz/mm2and because the sensors are created using a high-volume CMOS silicon process they feature an exceptional breakdown voltage uniformity of ±250 mV.