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SOT-223 (TO-261)
Discrete Semiconductor Products

NSS40300MZ4T1G

Active
ON Semiconductor

3.0 A, 40 V LOW V<SUB>CE(SAT)</SUB> PNP POWER BIPOLAR JUNCTION TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheetDatasheet+1
SOT-223 (TO-261)
Discrete Semiconductor Products

NSS40300MZ4T1G

Active
ON Semiconductor

3.0 A, 40 V LOW V<SUB>CE(SAT)</SUB> PNP POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS40300MZ4T1G
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]175
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]2 W
Supplier Device PackageSOT-223 (TO-261)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.89
10$ 0.56
100$ 0.36
500$ 0.28
Digi-Reel® 1$ 0.89
10$ 0.56
100$ 0.36
500$ 0.28
Tape & Reel (TR) 1000$ 0.25
2000$ 0.23
3000$ 0.22
5000$ 0.20
7000$ 0.19
10000$ 0.19
25000$ 0.17
50000$ 0.17
NewarkEach (Supplied on Cut Tape) 1$ 0.74
10$ 0.48
25$ 0.43
50$ 0.38
100$ 0.33
250$ 0.29
500$ 0.26
ON SemiconductorN/A 1$ 0.18

Description

General part information

NSS40300MZ4 Series

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat)PNP Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.