NSS40300MZ4 Series

3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor

Catalog

3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor NSS40300MDR2G	653 mW	100 nA	100 MHz	8-SOIC	3.9 mm	0.154 in	40 V	8-SOIC	2 PNP (Dual)	-55 °C	150 °C	170 mV	180 hFE	3 A	Surface Mount
ON Semiconductor NSS40300MZ4T1G	2 W	100 nA		TO-261-4 TO-261AA				SOT-223 (TO-261)	PNP	-55 °C	150 °C	400 mV		3 A	Surface Mount	175	40 V
ON Semiconductor NSS40300MZ4T3G	2 W	100 nA		TO-261-4 TO-261AA				SOT-223 (TO-261)	PNP	-55 °C	150 °C	400 mV		3 A	Surface Mount	175	40 V

Catalog

3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor

Key Features

• Low Collector-Emitter Saturation Voltage

• High DC Current Gain

• High Current-Gain Bandwidth Product

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• NSS40301MZ4 is NPN complimentary device

• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Description

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat)PNP Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.