Specification	NSS40300MZ4T3G

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	175
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223 (TO-261)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

NSS40300MZ4 Series

3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor NSS40300MDR2G	653 mW	100 nA	100 MHz	8-SOIC	3.9 mm	0.154 in	40 V	8-SOIC	2 PNP (Dual)	-55 °C	150 °C	170 mV	180 hFE	3 A	Surface Mount
ON Semiconductor NSS40300MZ4T1G	2 W	100 nA		TO-261-4 TO-261AA				SOT-223 (TO-261)	PNP	-55 °C	150 °C	400 mV		3 A	Surface Mount	175	40 V
ON Semiconductor NSS40300MZ4T3G	2 W	100 nA		TO-261-4 TO-261AA				SOT-223 (TO-261)	PNP	-55 °C	150 °C	400 mV		3 A	Surface Mount	175	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.51
		10	$ 0.43
		100	$ 0.30
		500	$ 0.23
		1000	$ 0.19
		2000	$ 0.17
	Digi-Reel®	1	$ 0.51
		10	$ 0.43
		100	$ 0.30
		500	$ 0.23
		1000	$ 0.19
		2000	$ 0.17
	Tape & Reel (TR)	4000	$ 0.17
		8000	$ 0.16
		12000	$ 0.15
		28000	$ 0.15
Newark	Each (Supplied on Full Reel)	3000	$ 0.19
		6000	$ 0.18
		12000	$ 0.17
		18000	$ 0.15
		30000	$ 0.15
ON Semiconductor	N/A	1	$ 0.15

Description

General part information

NSS40300MZ4 Series

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat)PNP Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.