APTGLQ50H65T1G

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IGBT MODULE 650V 70A 175W SP1

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Discrete Semiconductor Products

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IGBT MODULE 650V 70A 175W SP1

Technical Specifications

Parameters and characteristics for this part

Specification	APTGLQ50H65T1G

Configuration	Full Bridge
Current - Collector (Ic) (Max) [Max]	70 A
Current - Collector Cutoff (Max) [Max]	50 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	3.1 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	175 W
Supplier Device Package	SP1
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max)	650 V

650V/Three level inverter/IGBT modules

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]	Configuration	Power - Max [Max]
Microchip Technology APTGLQ50H65T3G	Chassis Mount	-40 C	175 °C	SP3F	Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Full Bridge	175 W
Microchip Technology APTGLQ50H65T1G	Chassis Mount	-40 C	175 °C	SP1	Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Full Bridge	175 W
Microchip Technology APTGLQ50DDA65T3G	Chassis Mount	-40 C	175 °C		Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Dual Boost Chopper	175 W
Microchip Technology APTGLQ50TL65T3G	Chassis Mount	-40 C	175 °C	SP3F	Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Three Level Inverter	175 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* IGBT 3 fast

* Low voltage drop

* Low leakage current

Technical documentation and resources