APTGLQ50TL65T3G-Module Series

650V/Three level inverter/IGBT modules

Catalog

650V/Three level inverter/IGBT modules

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]	Configuration	Power - Max [Max]
Microchip Technology APTGLQ50H65T3G	Chassis Mount	-40 C	175 °C	SP3F	Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Full Bridge	175 W
Microchip Technology APTGLQ50H65T1G	Chassis Mount	-40 C	175 °C	SP1	Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Full Bridge	175 W
Microchip Technology APTGLQ50DDA65T3G	Chassis Mount	-40 C	175 °C		Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Dual Boost Chopper	175 W
Microchip Technology APTGLQ50TL65T3G	Chassis Mount	-40 C	175 °C	SP3F	Standard	650 V	50 µA	Trench Field Stop	2.3 V	Module	3.1 nF	70 A	Three Level Inverter	175 W

Catalog

650V/Three level inverter/IGBT modules

Key Features

• + Configuration: Three level inverter

• + VCES (V): 650

• + VCESat (V): 1.85

• + Current (A) Tc=80C: 50

• + Silicon type: TRENCH 3 FAST

• + Package: SP3F

Description

* IGBT 3 fast * Low voltage drop * Low leakage current * Low switching losses * Kelvin emitter for easy drive * Low stray inductance * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant