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2N4912
Discrete Semiconductor Products

JANTXV2N3584

Active
Microchip Technology

NPN SILICON HIGH-POWER 250V TO 300V, 2A

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Documents2N3584 2N3585
2N4912
Discrete Semiconductor Products

JANTXV2N3584

Active
Microchip Technology

NPN SILICON HIGH-POWER 250V TO 300V, 2A

Deep-Dive with AI

Documents2N3584 2N3585

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N3584
Current - Collector (Ic) (Max) [Max]2 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]25
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]2.5 W
QualificationMIL-PRF-19500/384
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic750 mV
Voltage - Collector Emitter Breakdown (Max)250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 240.24
Microchip DirectN/A 1$ 240.24
NewarkEach 1$ 240.24
100$ 223.08
500$ 214.50

Description

General part information

JANTXV2N3584-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384.

Documents

Technical documentation and resources