JANTXV2N3584-Transistor Series

NPN Silicon High-Power 250V to 300V, 2A

Catalog

NPN Silicon High-Power 250V to 300V, 2A

Part	Mounting Type	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Grade
Microchip Technology JANTXV2N3584	Through Hole	MIL-PRF-19500/384	25	2.5 W	250 V	NPN	2 A	750 mV	TO-66 (TO-213AA)	TO-213AA TO-66-2	Military

Catalog

NPN Silicon High-Power 250V to 300V, 2A

Key Features

- The device package for the encapsulated device type are as follows: (TO-66).

Description

This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384.