Discrete Semiconductor Products
STW10N105K5
ActiveSTMicroelectronics
N-CHANNEL 1050 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFETS IN TO-247 PACKAGE
Discrete Semiconductor Products
STW10N105K5
ActiveSTMicroelectronics
N-CHANNEL 1050 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFETS IN TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW10N105K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 1050 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 545 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 130 W |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 5.03 | |
Description
General part information
STW10N105K5 Series
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources