STW10N105K5 Series

N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package

Catalog

N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Vgs (Max) [Max]	FET Type	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
STMicroelectronics STW10N105K5	5 V	21.5 nC	MOSFET (Metal Oxide)	Through Hole	30 V	N-Channel	TO-247-3	TO-247-3	150 °C	-55 °C	545 pF	130 W	6 A	10 V	1050 V

Catalog

N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.