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DPAK_369C
Discrete Semiconductor Products

MJD200T5G

Obsolete
ON Semiconductor

TRANS NPN 25V 5A DPAK

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DPAK_369C
Discrete Semiconductor Products

MJD200T5G

Obsolete
ON Semiconductor

TRANS NPN 25V 5A DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD200T5G
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce45 hFE
Frequency - Transition65 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.4 W
Supplier Device PackageDPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.8 V
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MJD200 Series

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Documents

Technical documentation and resources