MJD200 Series

5 A, 25 V NPN Bipolar Power Transistor

Catalog

5 A, 25 V NPN Bipolar Power Transistor

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Package / Case	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max)	Supplier Device Package
ON Semiconductor MJD200RLG	Surface Mount	25 V	1.4 W	100 nA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 MHz	45 hFE	1.8 V	150 °C	-65 °C	5 A	DPAK
ON Semiconductor MJD200T5G	Surface Mount	25 V	1.4 W	100 nA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 MHz	45 hFE	1.8 V	150 °C	-65 °C	5 A	DPAK
ON Semiconductor MJD200T4	Surface Mount	25 V	12.5 W		NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 MHz	45 hFE	300 mV	150 °C	-65 °C	5 A	DPAK

Catalog

5 A, 25 V NPN Bipolar Power Transistor

Key Features

• Collector-Emitter Sustaining Voltage - VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain - hFE= 70 (Min) @ IC= 500 mAdc= 45 (Min) @ IC= 2 Adc= 10 (Min) @ IC= 5 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 0.3 Vdc (Max) @ I C = 500 mAdc= 0.75 Vdc (Max) @ IC= 2.0 Adc

• High Current-Gain - Bandwidth Product - fT= 65 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage - ICBO= 100 nAdc @ Rated VCB

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.