
Discrete Semiconductor Products
MJD200T4
ObsoleteON Semiconductor
5 A, 25 V NPN BIPOLAR POWER TRANSISTOR

Discrete Semiconductor Products
MJD200T4
ObsoleteON Semiconductor
5 A, 25 V NPN BIPOLAR POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD200T4 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 hFE |
| Frequency - Transition | 65 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 12.5 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJD200 Series
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Documents
Technical documentation and resources