Zenode.ai Logo
Beta
NJVMJD32CG
Discrete Semiconductor Products

MJD200T4

Obsolete
ON Semiconductor

5 A, 25 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

NJVMJD32CG
Discrete Semiconductor Products

MJD200T4

Obsolete
ON Semiconductor

5 A, 25 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD200T4
Current - Collector (Ic) (Max)5 A
DC Current Gain (hFE) (Min) @ Ic, Vce45 hFE
Frequency - Transition65 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]12.5 W
Supplier Device PackageDPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MJD200 Series

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.