Discrete Semiconductor Products

KSH2955TF

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSH2955TF

Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	8 V
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN Epitaxial Silicon Transistor

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSH29CTF	3 MHz	15	1.56 W	100 V	700 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	NPN	1 A	Surface Mount	50 µA	150 °C
ON Semiconductor KSH2955TF	2 MHz	20	1.75 W		8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	PNP		Surface Mount	50 µA	150 °C	60 V
ON Semiconductor KSH29ITU	3 MHz	15	1.56 W	40 V	700 mV	IPAK TO-251-3 Short Leads TO-251AA	IPAK	NPN	1 A	Through Hole	50 µA	150 °C
ON Semiconductor KSH29CITU	3 MHz	15	1.56 W	100 V	700 mV	IPAK TO-251-3 Short Leads TO-251AA	IPAK	NPN	1 A	Through Hole	50 µA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources