KSH2955 Series

NPN Epitaxial Silicon Transistor

Catalog

NPN Epitaxial Silicon Transistor

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSH29CTF	3 MHz	15	1.56 W	100 V	700 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	NPN	1 A	Surface Mount	50 µA	150 °C
ON Semiconductor KSH2955TF	2 MHz	20	1.75 W		8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	PNP		Surface Mount	50 µA	150 °C	60 V
ON Semiconductor KSH29ITU	3 MHz	15	1.56 W	40 V	700 mV	IPAK TO-251-3 Short Leads TO-251AA	IPAK	NPN	1 A	Through Hole	50 µA	150 °C
ON Semiconductor KSH29CITU	3 MHz	15	1.56 W	100 V	700 mV	IPAK TO-251-3 Short Leads TO-251AA	IPAK	NPN	1 A	Through Hole	50 µA	150 °C

NPN Epitaxial Silicon Transistor

• Lead Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, "-I" Suffix)

• Electrically Similar to Popular KSE2955

• DC Current Gain Specified to 10 A

• High Current Gain - Bandwidth Product: fT=2 MHz (MIN), IC=-500 mA

• General Purpose Amplifier and Low Speed Switching Applications

• D-PAK for Surface Mount