Discrete Semiconductor Products

KSH29CITU

Obsolete

TRANS NPN 100V 1A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 100V 1A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	KSH29CITU

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1.56 W
Supplier Device Package	IPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN Epitaxial Silicon Transistor

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSH29CTF	3 MHz	15	1.56 W	100 V	700 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	NPN	1 A	Surface Mount	50 µA	150 °C
ON Semiconductor KSH2955TF	2 MHz	20	1.75 W		8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	PNP		Surface Mount	50 µA	150 °C	60 V
ON Semiconductor KSH29ITU	3 MHz	15	1.56 W	40 V	700 mV	IPAK TO-251-3 Short Leads TO-251AA	IPAK	NPN	1 A	Through Hole	50 µA	150 °C
ON Semiconductor KSH29CITU	3 MHz	15	1.56 W	100 V	700 mV	IPAK TO-251-3 Short Leads TO-251AA	IPAK	NPN	1 A	Through Hole	50 µA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources