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TO-220-3
Discrete Semiconductor Products

RFP70N03

Obsolete
ON Semiconductor

MOSFET N-CH 30V 70A TO220-3

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TO-220-3
Discrete Semiconductor Products

RFP70N03

Obsolete
ON Semiconductor

MOSFET N-CH 30V 70A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRFP70N03
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)30 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]260 nC
Input Capacitance (Ciss) (Max) @ Vds3300 pF
Mounting TypeThrough Hole
Package / CaseTO-220-3
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

RFP70N06 Series

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.Formerly developmental type TA78440.

Documents

Technical documentation and resources