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Technical Specifications
Parameters and characteristics for this part
| Specification | RFP70N03 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 260 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RFP70N06 Series
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.Formerly developmental type TA78440.
Documents
Technical documentation and resources