RFP70N06 Series

N-Channel Power MOSFET 60V, 70A, 14mΩ

Catalog

N-Channel Power MOSFET 60V, 70A, 14mΩ

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology
ON Semiconductor RFP70N06	TO-220-3	-55 °C	175 ░C	10 V	60 V	14 mOhm	2250 pF	N-Channel	4 V	Through Hole	20 V	156 nC	TO-220-3	70 A	150 W	MOSFET (Metal Oxide)
ON Semiconductor RFP70N03	TO-220-3				30 V	10 mOhm	3300 pF	N-Channel	4 V	Through Hole		260 nC	TO-220-3	70 A		MOSFET (Metal Oxide)

Catalog

N-Channel Power MOSFET 60V, 70A, 14mΩ

Key Features

• 70A, 60V

• rDS(ON)= 0.014Ω

• Temperature Compensating PSPICE®Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

• 175°C Operating Temperature

• Related LiteratureTB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

Description

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.Formerly developmental type TA78440.