Discrete Semiconductor Products

RFP70N06

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ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 70 A, 60 V, 14 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

RFP70N06

Active

ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 70 A, 60 V, 14 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RFP70N06

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	156 nC
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

RFP70N06 Series

N-Channel Power MOSFET 60V, 70A, 14mΩ

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology
ON Semiconductor RFP70N06	TO-220-3	-55 °C	175 ░C	10 V	60 V	14 mOhm	2250 pF	N-Channel	4 V	Through Hole	20 V	156 nC	TO-220-3	70 A	150 W	MOSFET (Metal Oxide)
ON Semiconductor RFP70N03	TO-220-3				30 V	10 mOhm	3300 pF	N-Channel	4 V	Through Hole		260 nC	TO-220-3	70 A		MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.01
		10	$ 1.95
		100	$ 1.35
		500	$ 1.09
		1000	$ 1.01
		2000	$ 0.95
Newark	Each	1	$ 3.40
		10	$ 1.89
		100	$ 1.78
		500	$ 1.65
		1600	$ 1.62
		3200	$ 1.59
		5600	$ 1.55
ON Semiconductor	N/A	1	$ 1.01

Description

General part information

RFP70N06 Series

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.Formerly developmental type TA78440.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing