Discrete Semiconductor Products

CSD13381F4T

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12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 180 MOHM, GATE ESD PROTECTION

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Search across all available documentation for this part.

DocumentsSemiconductor and IC Package Thermal Metrics (Rev. D)CSD13381F4 12-V N-Channel FemtoFET™ MOSFET datasheet (Rev. F)+8

Discrete Semiconductor Products

CSD13381F4T

Active

Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 180 MOHM, GATE ESD PROTECTION

Deep-Dive with AI

DocumentsSemiconductor and IC Package Thermal Metrics (Rev. D)CSD13381F4 12-V N-Channel FemtoFET™ MOSFET datasheet (Rev. F)+8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD13381F4T

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	3-PICOSTAR
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1.1 V

CSD13381F4 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD13381F4T	1.8 V 4.5 V	500 mW	-55 °C	150 °C	180 mOhm	8 V	MOSFET (Metal Oxide)	12 V	1.4 nC	Surface Mount	3-PICOSTAR	2.1 A	1.1 V	N-Channel	3-XFDFN	200 pF
Texas Instruments CSD13381F4	1.8 V 4.5 V	500 mW	-55 °C	150 °C	180 mOhm	8 V	MOSFET (Metal Oxide)	12 V	1.4 nC	Surface Mount	3-PICOSTAR	2.1 A	1.1 V	N-Channel	3-XFDFN	200 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.64
		10	$ 0.56
		100	$ 0.39
	Digi-Reel®	1	$ 0.64
		10	$ 0.56
		100	$ 0.39
	Tape & Reel (TR)	250	$ 0.53
		500	$ 0.46
		1250	$ 0.39
		2500	$ 0.35
		6250	$ 0.33
		12500	$ 0.30
		25000	$ 0.30
Texas Instruments	SMALL T&R	1	$ 0.74
		100	$ 0.48
		250	$ 0.36
		1000	$ 0.24

Description

General part information

CSD13381F4 Series

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.