CSD13381F4 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD13381F4T	1.8 V 4.5 V	500 mW	-55 °C	150 °C	180 mOhm	8 V	MOSFET (Metal Oxide)	12 V	1.4 nC	Surface Mount	3-PICOSTAR	2.1 A	1.1 V	N-Channel	3-XFDFN	200 pF
Texas Instruments CSD13381F4	1.8 V 4.5 V	500 mW	-55 °C	150 °C	180 mOhm	8 V	MOSFET (Metal Oxide)	12 V	1.4 nC	Surface Mount	3-PICOSTAR	2.1 A	1.1 V	N-Channel	3-XFDFN	200 pF

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Key Features

• Low on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.