Discrete Semiconductor Products

STF26N65DM2

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STMicroelectronics

N-CHANNEL 650 V, 0.156 OHM TYP., 20 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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Discrete Semiconductor Products

STF26N65DM2

Active

STMicroelectronics

N-CHANNEL 650 V, 0.156 OHM TYP., 20 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STF26N65DM2

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STF26 Series

N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220FP package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STF26N60DM6	150 °C	-55 °C	600 V	25 V	TO-220-3 Full Pack	10 V	940 pF	4.75 V	24 nC	N-Channel	18 A	Through Hole	195 mOhm	TO-220FP	MOSFET (Metal Oxide)
STMicroelectronics STF26N60M2	150 °C	-55 °C	600 V	25 V	TO-220-3 Full Pack	10 V		4 V		N-Channel	20 A	Through Hole	165 mOhm	TO-220FP	MOSFET (Metal Oxide)
STMicroelectronics STF26NM60N			600 V	30 V	TO-220-3 Full Pack	10 V		4 V		N-Channel	20 A	Through Hole	165 mOhm	TO-220FP	MOSFET (Metal Oxide)	1800 pF	150 °C	35 W	60 nC
STMicroelectronics STF26N65DM2	150 °C	-55 °C	650 V	25 V	TO-220-3 Full Pack	10 V		5 V		N-Channel	20 A	Through Hole	190 mOhm	TO-220FP	MOSFET (Metal Oxide)	1480 pF			35.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.73
	Tube	1000	$ 1.84

Description

General part information

STF26 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources