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ROHM BAJ5CC0T
Discrete Semiconductor Products

STF26NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN A TO-220FP PACKAGE

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DocumentsProduct Change Notice ENDatasheet+16
ROHM BAJ5CC0T
Discrete Semiconductor Products

STF26NM60N

Active
STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENDatasheet+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF26NM60N
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1800 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs165 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 423$ 4.44
Tube 1$ 6.35
50$ 5.07
100$ 4.53
500$ 4.00
1000$ 3.60
2000$ 3.37
NewarkEach 1$ 5.58
10$ 4.71
25$ 4.02
50$ 3.67
100$ 3.09
250$ 2.53
500$ 2.37

Description

General part information

STF26 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.