Specification	MJF3055

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	90 V

MJF3055 Series

NPN Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MJF3055	2.5 V	TO-220FP	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole	2 W	2 MHz	20	NPN	1 µA	90 V
ON Semiconductor MJF3055G	2.5 V	TO-220FP	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole	2 W	2 MHz	20	NPN	1 µA	90 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Bipolar Power Transistor is specifically designed for general purpose amplifier and switching applications.