Specification	MJF3055G

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	90 V

MJF3055 Series

NPN Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MJF3055	2.5 V	TO-220FP	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole	2 W	2 MHz	20	NPN	1 µA	90 V
ON Semiconductor MJF3055G	2.5 V	TO-220FP	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole	2 W	2 MHz	20	NPN	1 µA	90 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is specifically designed for general purpose amplifier and switching applications.

Technical documentation and resources