MJF3055 Series

NPN Bipolar Power Transistor

Catalog

NPN Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MJF3055	2.5 V	TO-220FP	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole	2 W	2 MHz	20	NPN	1 µA	90 V
ON Semiconductor MJF3055G	2.5 V	TO-220FP	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole	2 W	2 MHz	20	NPN	1 µA	90 V

NPN Bipolar Power Transistor

• Isolated Overmold Package (1500 Volts RMS Min)

• Electrically Similar to the Popular MJE3055T and MJE2955T

• Collector-Emitter Sustaining Voltage VCEO(sus)90 Volts

• 10 Amperes Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• UL Recognized, File #E69369, to 3500 VRMSIsolation

• Pb-Free Packages are Available

The Bipolar Power Transistor is specifically designed for general purpose amplifier and switching applications.